This Resulted within a reduced operate perform and the formation of the Schottky Get in touch with amongst the BrGO and n-style Si substrate. As a result of the upper proportion of B-C and B-C3 bonding in the BrGO/Si gadget than that from the rGO/Si, the decreased Schottky barrier height https://www.directivepublications.org/journal-of-applied-nanoscience/